Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
IE24100P
Description
RFHIC’s IE24100P is a 100W, gallium-nitride-on silicon carbide (GaN-on-SiC) transistor. Operable from 2400 to 2500 MHz, the IE24100P provides a high gain of 15.0dB with a 73.3% drain efficiency at 50V. To simplify system integration, the IE24100P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
Specification
| Max Freq. | 2500MHz |
|---|---|
| Output Power | 100W |
| Power Gain | 14.8dB |
| Drain Efficiency | 72% |
| VDC | 50 |
| Package Type | Flange |
| Min Freq2. | 2400MHz |
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