Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP2731200-08
Description
RFHIC’s RRP2731200-08 is an S-band, 250W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 2700 to3100 MHz, the RRP2731200-08 achieves 8dB of gain with an efficiency of 55%. The RRP2731200-08 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP2731200-08 achieves a duty of 20% and a pulse width of 500 us. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product Specification
Weather Radar
Air Traffic Control Radar
Surveillance Ground Radar
Meteorological Radar
Early Detection Radar
Specification
| Band | S-band |
|---|---|
| Min Freq2. | 2700MHz |
| Max Freq. | 3100MHz |
| Type | Pallet |
| Typ Output Power | 250W |
| Power Gain | 8dB |
| PAE | 55% |
| VDC | 38 |
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