Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s AE362 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 30 to 4000 MHz, the AE362 provides 20 dBm of output power at P1dB with a gain of 15.2 dB. The AE362 provides low current and high IP3.
View Product SpecificationMax Freq. | 4000MHz |
---|---|
Noise Figure | 1.2dB |
VDC | 4.5 |
Package | SOT-89 |
Min Freq2. | 30MHz |