Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AE379
Description
RFHIC’s AE379 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC), designed ideally for RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE379 provides 33 dBm of output power at P1dB with a gain of 11.5 dB and high OIP3 levels of 43 dBm. The AE379 is packaged in a plastic surface mount (SMD), lowering manufacturing costs.
View Product Specification
Receiver IF Amplifier
Cellular Communications
Base Station
CATV
DCS
WCDMA
Specification
| Max Freq. | 3500MHz |
|---|---|
| Noise Figure | 2.3dB |
| VDC | 5 |
| Package | SOIC-8 |
| Min Freq2. | 50MHz |
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