통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RWP15080-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2500 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin 3dBm. The RWP15080-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product SpecificationMin Freq2. | 700MHz |
---|---|
Max Freq. | 2700MHz |
Type | Pallet |
Typ Output Power | 100W |
Power Gain | 53dB |
VDC | 32 |