통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RWP03040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP03040-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product SpecificationMin Freq2. | 20MHz |
---|---|
Max Freq. | 520MHz |
Type | Pallet |
Typ Output Power | 40W |
Power Gain | 42dB |
VDC | 28 |