통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s RTP0809300-66 is a 300W, gallium-nitride (GaN) Wideband Power amplifier designed for microwave heating, microwave drying, and microwave plasma generation. This gallium-nitride (GaN) wideband amplifier operates from 800 to 900 MHz and offers high reliability and ruggedness. The RTP0809300-66 is fabricated using RFHIC’s state-of-the-art gallium-nitride-on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification| Min Freq2. | 800MHz |
|---|---|
| Max Freq. | 900MHz |
| Typ Output Power | 300W |
| Power Gain | 66dB |
| PAE | 41% |
| VDC | 45 |