통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RTP0809300-66 is a 300W, gallium-nitride (GaN) Wideband Power amplifier designed for microwave heating, microwave drying, and microwave plasma generation. This gallium-nitride (GaN) wideband amplifier operates from 800 to 900 MHz and offers high reliability and ruggedness. The RTP0809300-66 is fabricated using RFHIC’s state-of-the-art gallium-nitride-on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product SpecificationMin Freq2. | 800MHz |
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Max Freq. | 900MHz |
Typ Output Power | 300W |
Power Gain | 66dB |
PAE | 41% |
VDC | 45 |