TG2000-10

설명

RFHIC’s TG2000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for terrestrial trunked and military radio systems. Covering from 200 to 2000 MHz, the TG2000-10 yields a high gain of 12 dB with 50 % efficiency at P3dB. The TG2000-10 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs are available upon request.