통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RFDFE is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3440 to 3520 MHz, the RFDFE provides an output power of 3.7W with high efficiency of 39.5%. The RFDFE is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDFE is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 3.7W average power.To simplify system integration, the RFDFE is fully matched to 50 ohms with integrated DC blocking caps on both RF ports.
View Product SpecificationMax Freq. | 3520MHz |
---|---|
Typ Output Power | 3.7W |
Saturation Power | 32.4W |
Power Gain | 33dB |
Efficiency | 40% |
VDC | 48 |
Package | PP-1S |
Package Type | Surface Mount |
Min Freq2. | 3440MHz |