HM0220-03A

설명

RFHIC’s HM0220-03A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for radio systems and medical device applications. Covering from 200 to 2000 MHz, the HM0220-03A yields a high gain of 34 dB with 39% efficiency at P3dB. The HM0220-03A is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a hybrid surface mount (SMD) using a metal-lid and aluminum nitride (AIN) board to provide excellent thermal dissipation. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.