통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s HM0525-10A is a gallium-nitride (GaN) hybrid power amplifier ideally suited for jammer applications. Covering from 500 to 2500 MHz, the HM0525-10A yields a high gain of 20 dB with 30% efficiency at P3dB. The HM0525-10A is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a low-cost hybrid surface mount (SMD) for high breakdown voltage and efficiency. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.
View Product SpecificationMin Freq2. | 500MHz |
---|---|
Max Freq. | 2500MHz |
Saturation Power | 10W |
Power Gain | 20dB |
VDC | 28 |