통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
IE26085P
설명
RFHIC’s IE26085P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency of 70% at Psat.
The device is a single-stage internally matched power amplifier transistor, packaged in our NS-AS01 ceramic package. The IE26085P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
제품 사양
| Typ Output Power | 19W |
|---|---|
| VDC | 52 |
| Package | NS-AS01 |
| Package Type | Flange |
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