Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID38601D

ID38601D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID38601D is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 3980 MHz.Delivering 600 W of saturated power at 48V, the ID38601D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
Macro Base Stations

제품 사양

Max Freq. 3980MHz
Typ Output Power 81.2W
Saturation Power 600W
Power Gain 14.3dB
Efficiency 42%
VDC 48
Package RF24009DKR3
Package Type Flange
Min Freq2. 3700MHz

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