Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID19601D

ID19601D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID19601D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1930 to 1995 MHz.The ID19601D delivers 600 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.

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4G LTE, 5G NR system
Multi-Band, Multi-Mode
Doherty Amplifier

제품 사양

Max Freq. 1995MHz
Typ Output Power 81.3W
Saturation Power 600W
Power Gain 16.2dB
Efficiency 48.2%
VDC 48
Package RF24009DKR3
Package Type Flange
Min Freq2. 1930MHz

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