Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID46531D

ID46531D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID46531D is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 4500 to 4600 MHz. Delivering 510 W of saturated power at 48V, the ID46531D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE and 5G NR systems.

View Product Specification
4G LTE, 5G NR system
Multi-Band, Multi-Mode
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 4600MHz
Typ Output Power 71W
Saturation Power 510W
Power Gain 13.1dB
Efficiency 42%
VDC 48
Package RF24009DKR3
Package Type Flange
Min Freq2. 4500MHz

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