Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID38461DR

ID38461DR

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID38461DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3980 MHz. Delivering 460 W of saturated power at 48V, the ID38461DR can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
Doherty Amplifier

제품 사양

Max Freq. 3980MHz
Typ Output Power 56.2W
Saturation Power 460W
Power Gain 15dB
Efficiency 47%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 3700MHz

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