통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s ID36461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3600 MHz.The ID36461D delivers 460 W of saturated power at 48V. It can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, 5G NR, and GSM systems.
View Product SpecificationMax Freq. | 3600MHz |
---|---|
Typ Output Power | 56.2W |
Saturation Power | 460W |
Power Gain | 14.4dB |
Efficiency | 46% |
VDC | 48 |
Package | RF24008DKR3 |
Package Type | Flange |
Min Freq2. | 3400MHz |