ID36461D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID36461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3600 MHz.The ID36461D delivers 460 W of saturated power at 48V. It can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, 5G NR, and GSM systems.

View Product Specification
WiMAX, 5G NR, WCDMA
GSM, Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Max Freq. 3600MHz
Typ Output Power 56.2W
Saturation Power 460W
Power Gain 14.4dB
Efficiency 46%
VDC 48
Package RF24008DKR3
Package Type Flange
Min Freq2. 3400MHz