Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE27385D

IE27385D

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE27385D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency of 53% at 48.4 dBm. The IE27385D is designed to provide high efficiency and reliability. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2690MHz
Typ Output Power 69W
Saturation Power 385W
Power Gain 14dB
Efficiency 53%
VDC 48
Package RF24001DKR3
Package Type Flange
Min Freq2. 2620MHz

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