Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE18330D

IE18330D

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE18330D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency of 57% at 48 dBm.The IE18330D is designed to provide easier system integration and tuning. The device is internally matched and is suitable for Doherty amplifier, muti-band, and LTE base station applications.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 1880MHz
Typ Output Power 63W
Saturation Power 330W
Power Gain 16dB
Efficiency 57%
VDC 48
Package RF24001DKR3
Package Type Flange
Min Freq2. 1805MHz

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