Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID26275WD

ID26275WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID26275WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz.The ID26275WD delivers 316 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and WCDMA systems.

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WiMAX, LTE, WCDMA
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2690MHz
Typ Output Power 54W
Saturation Power 316W
Power Gain 14.1dB
Efficiency 51%
VDC 48
Package RF18010DKR3
Package Type Flange
Min Freq2. 2620MHz

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