Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE27275D

IE27275D

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE27275D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency of 59% at 47dBm.The IE27275D is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment applications.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2635MHz
Typ Output Power 50W
Saturation Power 275W
Power Gain 14.1dB
Efficiency 59%
VDC 48
Package RF24001DKR3
Package Type Flange
Min Freq2. 2575MHz

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