Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE18250D

IE18250D

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE18250D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz. The IE18250D delivers 260 W of saturated power at 48V with a drain efficiency of 58% at 46.5dBm.The IE18250D is designed to provide higher efficiency and linearity. The device is internally matched and is suitable for muti-carrier, WiMAX, and Doherty amplifier base station applications.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 1880MHz
Typ Output Power 45W
Saturation Power 260W
Power Gain 17dB
Efficiency 58%
VDC 48
Package RF24001DKR3
Package Type Flange
Min Freq2. 1805MHz

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