Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE23195WD

IE23195WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE23195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 220 W of saturated power at 48V with a drain efficiency of 56% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12001DR3 ceramic package. The IE23195WD can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2400MHz
Typ Output Power 40W
Saturation Power 220W
Power Gain 15.3dB
Efficiency 56%
VDC 48
Package RF12001DKR3
Package Type Flange
Min Freq2. 2300MHz

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