IE26195WD

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s IE26195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency of 54% at Psat. The IE26195WD is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for LTE, multi-carrier, and Doherty amplifier base station equipment applications.

View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2635MHz
Typ Output Power 32W
Saturation Power 195W
Power Gain 14.4dB
Efficiency 54%
VDC 48
Package RF12001DKR3
Package Type Flange
Min Freq2. 2575MHz