Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE19195WD

IE19195WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE19195WD is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz.The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency of 49% at 45dBm. The IE19195WD is an asymmetrical Doherty gallium nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for muti-band, LTE, and WCDMA base station applications.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2025MHz
Typ Output Power 32W
Saturation Power 195W
Power Gain 17dB
Efficiency 49%
VDC 48
Package RF12001DKR3
Package Type Flange
Min Freq2. 1880MHz

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