Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE36170WD

IE36170WD

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE36170WD is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency of 48% at 45 dBm.The IE36170WD is designed to provide users with easier system integration. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 3560MHz
Typ Output Power 32W
Saturation Power 170W
Power Gain 15dB
Efficiency 48%
VDC 48
Package RF12001DKR3
Package Type Flange
Min Freq2. 3520MHz

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