Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE27165PE

IE27165PE

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE27165PE is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) operable from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency of 43% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE27165PE can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2690MHz
Typ Output Power 40W
Saturation Power 165W
Power Gain 17dB
Efficiency 43%
VDC 48
Package NS-AS01
Package Type Flange
Min Freq2. 2620MHz

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