통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s RT12014P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency of 60% at Psat, 2.6GHz. The device is a single-stage internally matched power amplifier transistor packaged in our NS-CS01 ceramic package. The RT12014P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification| Max Freq. | 6000MHz |
|---|---|
| Typ Output Power | 3.2W |
| Saturation Power | 14W |
| Power Gain | 18dB |
| Efficiency | 35% |
| VDC | 48 |
| Package | NS-CS01 |
| Package Type | Flange |