Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE21110P

IE21110P

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE21110P is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency of 39% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our NS-AS01 ceramic package. The IE21110P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2170MHz
Typ Output Power 25W
Saturation Power 120W
Power Gain 18.4dB
Efficiency 39%
VDC 48
Package NS-AS01
Package Type Flange
Min Freq2. 2110MHz

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