Products RF 트랜지스터 GaN 트랜지스터 – RF 에너지 ET43055P

ET43055P

GaN 트랜지스터 – RF 에너지
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설명

RFHIC’s ET43055P is a 55W gallium-nitride on silicon carbide (GaN-on-SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a gain of 13.4dB with a 75.2% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.

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Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting

제품 사양

Max Freq. 6000MHz
Output Power 55W
Power Gain 13.4dB
Drain Efficiency 72.6%
VDC 50
Package Type Flange

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