IE13550D

설명

RFHIC’s IE13550D is a 550W gallium nitride on silicon carbide (GaN-on-SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operable from 1295 to 1305 MHz, the IE13550D provides a high power gain of 15 dB with a 79.5% drain efficiency at 50V. To simplify system integration, the IE13550D is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.