통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s IE09300PC is a 300W gallium-nitride (GaN) silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operable from 900 to 930 MHz, the IE09300PC provides a high gain of 18.0dB with an 80.21% drain efficiency at 50V. To simplify system integration, the IE09300PC is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product SpecificationMax Freq. | 930MHz |
---|---|
Output Power | 300W |
Power Gain | 18dB |
Drain Efficiency | 80.2% |
VDC | 50 |
Package Type | Flange |
Min Freq2. | 900MHz |