IE24300P

설명

RFHIC’s IE24300P is a 300W gallium nitride on silicon carbide GaN-on-SiC transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable from 2400 to 2500 MHz, the IE24300P provides a high gain of 12.3dB with a 71.2% drain efficiency at 50V. To simplify system integration, the IE24300P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.