ET43028P

설명

RFHIC’s ET43028P is a 28W gallium-nitride on silicon carbide (GaN-on-SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a high gain of 15.2 dB with a 67% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.