IE24200P

설명

RFHIC’s IE24200P is a 200W gallium nitride on silicon carbide (GaN-on-SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable from 2400 to 2500 MHz, the IE24200P provides a high gain of 13.1dB with a 76.6% drain efficiency at 50V. To simplify system integration, the IE24200P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.