통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
IE09150PC
설명
RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride on silicon carbide (GaN-on-SiC) transistor. Operable from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 83.11% drain efficiency at 50V. To simplify system integration, the IE09150PC is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.
View Product Specification
Microwave Heating
Microwave Drying
Microwave Ablation
Microwave Plasma Generation
Microwave Lighting
제품 사양
| Max Freq. | 930MHz |
|---|---|
| Output Power | 150W |
| Power Gain | 17.6dB |
| Drain Efficiency | 83.1% |
| VDC | 50 |
| Package Type | Flange |
| Min Freq2. | 900MHz |
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