IE24150P

설명

RFHIC’s IE24150P is a 150W gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operable from  2400 to 2500 MHz, the IE24150P provides a high gain of 13.8dB with a 73.3% drain efficiency at 50V. To simplify system integration, the IE24150P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.