통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RRP2735160-35 is an S-band, 180W, gallium-nitride (GaN) Power Amplifier designed for radar systems applications. Operating from 2700 to 3500 MHz, the RRP2735160-35 achieves 35dB of gain with an efficiency of 40%. The RRP2735160-35 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology in higher breakdown voltage, wider bandwidth, and higher efficiency. The RRP2735160-35 achieves a duty of 20% and a pulse width of 2000 us. Both RF ports have integrated DC-blocking capacitors and are fully matched to 50 Ohms.
View Product SpecificationBand | S-band |
---|---|
Min Freq2. | 2700MHz |
Max Freq. | 3500MHz |
Type | Pallet |
Typ Output Power | 180W |
Power Gain | 35dB |
PAE | 40% |
VDC | 50 |