통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s AE367 is a gallium arsenide GaAs HEMT monolithic microwave integrated circuit (MMIC) designed as a pre-drive or drive amplifier for 2G and 3G communication equipment. Operating from 50 to 3500 MHz, the AE367 provides 27 dBm of output power at P1dB with a gain of 15.5 dB. The AE367 is packaged in a plastic surface mount (SMD), lowering manufacturing costs.
View Product SpecificationMax Freq. | 3500MHz |
---|---|
Noise Figure | 3.5dB |
VDC | 5 |
Package | SOT-89 |
Min Freq2. | 50MHz |