통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
4G LTE 인프라
RFHIC의 GaN-on-SiC 기술을 통해 4G LTE 기지국에
고효율, 고성능의 핵심 부품을 제공합니다.
4G LTE 인프라
최신 4G LTE 제품
WLP0640 ›
RFHIC’s WLP0640 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 20 to 520 M...
WL2215-L ›
RFHIC’s WL2215-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s
HEMT (high-electron-mobility) process. Operating from 50 to 2200 MHz...
WL2208-L ›
RFHIC”s WL2208-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 50 to 2200...
WL1015-L ›
RFHIC”s WL1015-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 50 to 1000...
WL1008-L ›
RFHIC”s WL1008-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s E-p
high-electron-mobility (HEMT) process. Operating from 50 to 1000...
WL0510 ›
RFHIC’s WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC’s E-p high-electron-mobility (HEMT) process. Operating from 1 to 520 MHz...
WGL04 ›
RFHIC's WL0510 is a GaAs hybrid low noise amplifier designed using RFHIC's E-p high-electron-mobility (HEMT) process. Operating from 1 to 520 MHz, the WL0510...