IE24100P22222222

설명

RFHIC’s IE24100P is a 100W, gallium-nitride-on silicon carbide (GaN-on-SiC) transistor. Operable from 2400 to 2500 MHz, the IE24100P provides a high gain of 15.0dB with a 73.3% drain efficiency at 50V. To simplify system integration, the IE24100P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request.