통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC”s WL1008-L is a GaAs hybrid low-noise amplifier designed using RFHIC’s E-p
high-electron-mobility (HEMT) process. Operating from 50 to 1000 MHz, the WL1008-L yields a high gain of 16 with 31 dBm OIP3 levels. The WL1008-L is packaged in a hybrid surface mount (SMD); no matching circuit is required. The device is ideally suited for MILCOM and defense jammer applications.
View Product Specification
| Min Freq2. | 50MHz |
|---|---|
| Max Freq. | 1000MHz |
| Noise Figure | 1.5dB |
| Power Gain | 16dB |
| VDC | 8 |