통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s RFDFQ is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3300 to 3600 MHz, the RFDFQ provides an output power of 15.8W with high efficiency of 45.8%. The RFDFQ is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDFQ is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 15.8W average power. To simplify system integration, the RFDFQ is fully matched to 50 ohms with integrated DC blocking caps on both RF ports. Custom designs are available upon request.
View Product SpecificationMax Freq. | 3600MHz |
---|---|
Typ Output Power | 15.8W |
Saturation Power | 116.7W |
Power Gain | 32.4dB |
Efficiency | 46% |
VDC | 48 |
Package | PP-1S |
Package Type | Surface Mount |
Min Freq2. | 3300MHz |