Products RF 트랜지스터 GaN 트랜지스터 – 통신 ETQ2014P

ETQ2014P

GaN 트랜지스터 – 통신
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설명

RFHIC’s ETQ2014P is a discrete gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of 35% at Psat, 2.6 GHz.The device is a single-stage power amplifier transistor packaged in our DFN66726L-Q2 plastic package. The ETQ2014P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Max Freq. 6000MHz
Typ Output Power 3.2W
Saturation Power 15W
Power Gain 19dB
Efficiency 34%
VDC 48
Package DFN66726L-Q2
Package Type Surface Mount

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