Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE36085W

IE36085W

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE36085W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency of 35% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12002KR3 ceramic package. The IE36085W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Max Freq. 3600MHz
Typ Output Power 19W
Saturation Power 85W
Power Gain 17.3dB
Efficiency 35%
VDC 48
Package RF12002KR3
Package Type Flange
Min Freq2. 3400MHz

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