통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.

RFHIC’s IE36110W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency of 35% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12001KR3 ceramic package. The IE36110W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product SpecificationMax Freq. | 3600MHz |
---|---|
Typ Output Power | 25W |
Saturation Power | 110W |
Power Gain | 17.1dB |
Efficiency | 35% |
VDC | 48 |
Package | RF12001KR3 |
Package Type | Flange |
Min Freq2. | 3400MHz |