IE36110W

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s IE36110W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency of 35% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12001KR3 ceramic package. The IE36110W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 3600MHz
Typ Output Power 25W
Saturation Power 110W
Power Gain 17.1dB
Efficiency 35%
VDC 48
Package RF12001KR3
Package Type Flange
Min Freq2. 3400MHz