Products RF 트랜지스터 GaN 트랜지스터 – 통신 IE21385D

IE21385D

GaN 트랜지스터 – 통신
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설명

RFHIC’s IE21385D is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) operable from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency of 56% at 48 dBm.The IE21385D is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for multi-band, LTE, and WiMAX base station applications.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 2170MHz
Typ Output Power 63W
Saturation Power 385W
Power Gain 15dB
Efficiency 56%
VDC 48
Package RF24001DKR3
Package Type Flange
Min Freq2. 2110MHz

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