IE18085P

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s IE18085P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1805 to 1880 MHz.The IE18085P delivers 90 W of saturated power at 48V with a drain efficiency of 72% at Psat. The device is a single-stage internally matched power amplifier transistor packaged in our RF12002KR3 ceramic package. The IE18085P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 1880MHz
Typ Output Power 19W
Saturation Power 90W
Power Gain 19dB
Efficiency 37%
VDC 48
Package RF12002KR3
Package Type Flange
Min Freq2. 1805MHz