Products RF 트랜지스터 GaN 트랜지스터 – 통신 RT12055P

RT12055P

GaN 트랜지스터 – 통신
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설명

RFHIC’s RT12055P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz. The RT12055P delivers 60 W of saturated power at 48V. The device is a single-stage internally matched power amplifier transistor packaged in our NS-CS01 ceramic package. The RT12055P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 6000MHz
Typ Output Power 13W
Saturation Power 60W
Power Gain 16dB
Efficiency 34%
VDC 47
Package NS-CS01
Package Type Flange

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