Products RF 트랜지스터 GaN 트랜지스터 – 통신 RT12028P

RT12028P

GaN 트랜지스터 – 통신
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설명

RFHIC’s RT12028P is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz.The RT12028P delivers 30 W of saturated power at 48V with a drain efficiency of 60% at Psat, 2.6GHz. The device is a single-stage internally matched power amplifier transistor packaged in our NS-CS01 ceramic package. The RT12028P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Max Freq. 6000MHz
Typ Output Power 6.3W
Saturation Power 30W
Power Gain 18dB
Efficiency 30%
VDC 48
Package NS-CS01
Package Type Flange

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